Conclusion
By minimising mechanical contact for breaking the silicon with up to 200 000 Volt,
the high voltage fragmentation provides less contamination for higher and more
consistent quality silicon. The lower risk of contamination means that less or no
etching of the silicon is required to remove any compromised surface material. This
helps to speed up the silicon sizing process but also decreases the volume of
potentially environmentally-hazardous chemicals required. The controllable and
accurate size distribution reduces waste and off-spec material.
The implementation of the HV-crushing process to the industry has already started
with installations at key market players during 2015. Under current development is
the recycling process of off-spec monocrystalline silicon material.
Literature
1. Bluhm, H., Frey, W., Giese, H., Hoppé, P., Schultheiß, C. and Sträßner, R. 2000. Application
of Pulses HV Discharges to Material Fragmentation and Recycling. IEEE Transactions on
Dielectrics and Electrical Insulation 7 (5), 625 –636
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