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Table 2:

Selected analytical emission wavelength for ICP-OES, (I): atom emission, (II): ion

emission

element

analytical wavelength / nm

B

182.591 (I) / 182.641 (I)

/ 208.893 (I)

/ 208.959 (I) / 249.678 (I)

Mg

279.553 (II) / 280.270 (II)

/ 285.213 (I)

Al

237.312 (I) / 308.215 (I)

/ 309.271 (I)

/ 394.401 (I) / 396.152 (I)

P

177.495 (I) / 178.284 (I)

/ 178.766 (I)

/ 185.942 (I) / 213.618 (I)

Ca

315.887 (II) / 317.933 (II) / 393.366 (II)

Ti

334.941 (II) / 336.121 (II) / 337.280 (II) / 338.376 (II)

Cr

205.552 (II) / 206.149 (II) / 267.716 (II) / 283.563 (II)

Mn

257.610 (II) / 260.569 (II)

/ 279.482 (I) / 293.930 (II)

Fe

238.204 (II) / 239.562 (II) / 259.837 (II) / 259.940 (II) / 261.187 (II)

Ni

216.556 (II) / 231.604 (II)

/ 341.476 (I)

/ 352.454 (I)

Cu

204.379 (II) / 213.598 (II) / 224.700 (II)

/ 324.754 (I) / 327.396 (I)

Zr

327.305 (II) / 343.823 (II) / 349.621 (II)

Si

390.552 (I)

to control matrix stability

Ar

404.442 (I)

to control plasma stability

Results and discussion

ICP-OES performance and selection of analytical emission lines

The ICP-OES analysis in high-silicon and acidic matrices requires a reselection

and critical assessment of the analytical emission lines. To identify possible spectral

and non-spectral interferences originated by such matrices the silicon/acid

concentration in a multi-element standard solution (cf. Table 3) was increased

gradually from 0 to 5 mg g

-1

with the help of a method blank solution. With

increasing silicon and acid concentrations, a dramatic decrease of the signal-to-

background ratio was found for all emissions in the UV range, while the emissions in

the visible range are not significantly affected by the matrix.

0 1 2 3 4 5

2.70

2.75

2.80

2.85

2.90

2.95

3.00

3.05

3.10

0 1 2 3 4 5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

B 182.641 nm

selectivity of boron emission / cts (ng g

-1

)

-1

Si / mg g

-1

Cr 206.149 nm (UV)

Cr 267.716 nm (VIS)

Ni 216.556 nm (UV)

Ni 341.476 nm (VIS)

rel. signal-to-background ratio

Si / mg g

-1

Figure 1

: Relative signal-to-background ratio of selected nickel and cobalt emission lines as a

function of silicon matrix concentration for standard solutions of 67 ng g

-1

Ni and 67 ng g

-1

Co

(left) and selectivity (given as slope of calibration function) of boron emission at 182.641 nm

as a function of silicon concentration, determined by calibrations from Table 3 (right).

99