Application

Possibilities:
  • Temperature limit: ~1800K. Possibly higher...
  • Size: Crucible diameter up to 42mm
  • Controlled atmosphere (inert gas, CO(g) should probably be avoided...)
  • Possibility of using a translation system for monitoring directional solidification of silicon or other materials. A special cup-system made of Mo is used for solidification of mc-Si. It isolates the melt from the rest of the chamber and leads the argon (or whatever inert gas) directly onto the melt.
Can not be used for:
  • With oxidizing atmosphere.
Previously used for:
  • Multicrystalline and quasi-monocrystalline silicon directional solidification.

 

 

Before you begin

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